RIR Power Electronics Limited has expanded its product portfolio with the launch of advanced Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), aimed at improving efficiency and reliability across next-generation power electronics applications, the company announced.
The newly introduced SiC MOSFETs are designed for high-performance use in electric vehicle onboard chargers, charging infrastructure, traction inverters, megawatt charging systems (MCS), solar inverters, energy storage systems, UPS, power supplies, motor drives, welding equipment, industrial machinery, and testing equipment.
The company also recently introduced Merged-PiN Schottky (MPS) diodes, developed for demanding applications such as electric vehicles and hybrid electric vehicles, data centres and AI infrastructure, renewable energy and grid systems, industrial drives, aerospace and defence, as well as green hydrogen and electrolysis systems, where high efficiency, ruggedness, and strong thermal performance are required.
Dr. Harshad Mehta, Non-Executive Chairman of RIR Power Electronics Limited, said the addition of 1200V SiC MOSFETs strengthens the company’s ability to deliver reliable high-performance Silicon Carbide solutions for next-generation power applications. He noted that the company’s experience in high-power semiconductors enables designers worldwide to deploy SiC technologies efficiently across sectors including electric mobility, data centres, renewable energy, and industrial systems.
With over 55 years of experience in high-power semiconductor technology, RIR Power Electronics Limited said it remains the only Indian company with existing high-power semiconductor fabrication capability, with proven expertise in devices rated up to 20,000V and 12,000A.
The company added that its global development operations in the United States and the upcoming Silicon Carbide manufacturing campus in Odisha will support the creation of a vertically integrated SiC ecosystem covering device design, wafer processing, packaging, and application support, enabling production of high-voltage, high-reliability MOSFETs and diodes optimized for performance, manufacturability, and long-term system reliability.
